page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures c omplementary type the pnp transistor a 1015 is recommended. marking : h f maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo 6 0 v col l ector - emitter v o l t age v ce o 50 v emitter - base v o l t a g e v ebo 5 v col l ector cur re n t - conti n u o us i c 1 5 0 m a col l ector p o w e r dissi p a t i on p c 0. 2 w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) p arame t e r s y m b ol t e st cond i tions m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = 100ua, i e =0 60 v collector - emitter bre a kd o w n v ol t age v ceo i c = 0.1ma, i b =0 50 v emitter - base breakdown voltage v ebo ie=10 0 a, ic=0 5 v collector cut - off current i cbo v cb =60 v , i e =0 0.1 ua collector cut - off current i ce o v ce =50 v , i b =0 0.1 ua emitter cut - off current i eb o v eb = 5 v , i c =0 0.1 ua dc cur r ent gain h fe v ce = 6 v , i c = 2ma 130 400 collecto r - emitter satu r ation v o l t age v ce (sat) i c =100ma, i b = 10ma 0.25 v ba s e - emitt e r sat u rati o n v o l t a g e v be (sat) i c =100ma, i b = 10ma 1 v t r a n s ition fr e qu e n c y f t v ce =10 v , i c = 1 ma, f=30mhz 80 mhz class ification of h fe rank l h range 1 30 - 200 2 00 - 4 00 ( n p n ) 1. base 2. emitter sot - 23 3. collecto C1815
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. typical characteristics C1815
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